20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 irf250/2511252/253 n-channel power mosfets features low ros(on) improved inductive ruggedness fast switching times rugged polyslllcon gate cell structure low input capacitance extended safe operating area improved high temperature reliability to-3 package (high current) product summary part number irf250 irf251 IRF252 irf253 vps 200v 150v 200v 150v ros(on) 0.0850 0.0850 0.120 0.120 id 30a 30a 2sa 25a to-3 maximum ratings characteristic drain-source voltage (1) drain-gale voltage (rgs=1.0mo)(1) gate-source voltage continuous drain, current tc=25c continuous drain current tc-100c drain current? pulsed (3) gate current? pulsed total power dissipation @ tc=25c derate above 25c operating and storage junction temperature range maximum lead temp, for soldering purposes. 1/8" from case for 5 seconds symbol vdss vdor ves id id idm iqm pd tj, tstg tl irf2so 200 200 irf251 150 150 irf2s2 200 200 irf2s3 150 150 20 30 19 120 30 19 120 25 16 100 25 16 100 1.6 150 1.2 -55 to 1 50 300 unit vdc vdc vdc ado adc adc adc watts w/c c ?c notes: (1) tj=25"c to 150c (2) pulse test: pulse wldthooops, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature nj sem.-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use " nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
irf250/251/252/253 n-channel power mosfets electrical characteristics (tc=25-c unless otherwise specified) characteristic drain-source breakdown voltage gate threshold voltage gate-source leakage forward gate-source leakage reverse zero gate voltage drain current on-state drain-source current (2) static drain-source on-state resistance (2) forward transconductance (2) input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source plus' gate-drain) gate-source charge gate-drain ("miller") charge symbol bvoss vos -cfc. com c/ss td(on) t, 1d(off) t( q8 qbs q* type irf250 IRF252 irf261 irf253 all all all all irf250 irf251 IRF252 irf263 irf250 irf251 IRF252 irf253 all all all all all all all all all all all mln 200 150 2.0 - - - ? 30 25 - - 8.0 - ? ? ? ? ? ? - ? - typ - - ? ? - ? ? ? - - 0.07 0.09 12.5 2640 800 300 ? ? ? ? 68 18 50 max - - ' 4.0 100 -100 250 1000 - - 0.085 0.120 ? 3000 1200 500 35 100 125 100 120 ? - units v v .v na na ma j?a a a ' n 0 0 pf pf pf ns ns ns ns nc nc nc tast conditions ves=ov ld=250fld[dn)xrds(on> max., vqs= 1 0v vqs=10v, id=16a vds>io(on)xrdslon)tiux., lo=16a vqs=ov, vds=25v, f= 1.0mhz vdd=0.5bvoss, ld=1ba. zo=4.7q (mosfet switching times are essentially independent of operating temperature.) vas-lov, lo=38a, v[>s=0,8 max. rating (gate charge is essentially independent of operating temperature. ) thermal resistance juhction-to-case case-to-sink junction-to- ambient rovic rlhcs riwa all all 'all ? ? - ? 0.1 - 0.83 - 30 k/w k/w k7w mounting surface flat, smooth, and greased free air operation notes: (1) tj-26c to 150c (2) pulse test: pulse wldthooops, duty cycla<2% (3) repetitive rating: pulse width limited by max. junction temperatura
irf250/251/252/253 n-channel power mosfets source-drain diode ratings and characteristics characteristic continuous source current (body diode) pulse source current (body diode) (3) diode forward voltage (2) reverse recovery time symbol is ism vsd fcr type irf250 irf251 IRF252 irf253 irf2so irf251 IRF252 irf253 irf250 irf251 IRF252 irf263 all mln - - - - - - - typ - ? - - - - 750 max 30 26 120 100 2.0 1.8 ? units a a a . a v v ns test conditions modified mosfet symbol /f- showing the integral ojfl reverse p-n junction rectifier _tp 1 -is tc=25c. ls=30a, vos=ov tc-250c. ls=25a, vgs=ov tj-150'c, if=30a. dlf/dt= 1 ooa/ps notes: (1) tj=25cto 150-c (2) pulse test: pulse wldthooous, duty cycle<2% (3) flepetitivo rating: pulse width limited by max. junction temperature 10 30 40 so vds. orain-to-source voltage (volts) typical output characteristics vot, oate-to-sourc volta06 (volts) typical transfer chsracleilstics 0.4 06 1.2 16 vds. drain-to-source voltage (volts) typical saturation characteristics 1.0 2 s 10 20 so 100 200 sou 100o vds, qraim-tmource voltaoe (volts) maximum sal* operating ana
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